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USR Semiconductor Co., Ltd
2D150 SYMBOL CHARACTERISTIC TEST CONDITIONS
Single-phase full wave rectifying circuit, TC=100C VRRM tp=10ms VRsM= VDRM&VRRM+200V at V RRM 10ms half sine wave VR=0.6VRRM
DIODE MODULE
Tj(C)
VALUE Min Type Max
150 600 1800 10 2.50 31.8 0.80
UNIT
IO VRRM IRRM IFSM It VFO rF VFM Rth(j-c) Viso Fm Tstg Wt Outline
2
DC output current Repetitive peak reverse voltage Repetitive peak current Surge forward current I T for fusing coordination Threshold voltage
2
150 150 150 150
A V mA KA A s*10 V
2 3
150 Forward slop resistance Peak forward voltage Thermal resistance Junction to heatsink Isolation voltage Terminal connection torque(M4) Mounting torque(M6) Stored temperature Weight 410F4 -40 430 I FM=225A Single side cooled 50Hz,R.M.S,t=1min,I iso:1mA(max) 2500 1.5 3.0 125 25 3.8 1. 655 0.150
m
V C /W V N* m N* m C g
OUTLINE DRAWING & CIRCUIT DIAGRAM
USR Semiconductor Co., Ltd
Peak forward Voltage Vs.Peak forward Current MDQ/S150 3.5 3 2.5 2 1.5 1 0.5 10 100 Instantaneous on-state currant,amperes 1000 Tj=150C Transient thermal impedance,C/W Max. junction To case Thermai Impedance Vs.Time 0.15 0.15
DIODE MODULE
Instantaneous on-state voltage,volts
0.12
0.09
0.06
0.03
0 0.001
0.01
0.1 time S
1
10
Fig.1
Max. Power Dissipation Vs.Mean forward Current MDQ150 600 Max.on-state dissipation,wates 500 400 300 200 100 0 0 50 100 150 Mean on-state current,amperes 200 60 0 30 Case temperature,C 160
Fig.2
Max. case Temperature Vs.Mean forward Current MDQ150
140
120
100
80
60 90 120 150 Mean on-state current,amperes
180
Fig.3
Surge Current Vs.Cycles 2.50
2.8
Fig.4
I2t 31.8 Vs.Time 35 32 Maximum I2t(Kamps2,secs) 29 26 23 20 17 14 11
Total peak half-sine surge current,kA
2.4
2
1.6
1.2
0.8
0.4 1
8 Cycles at 50Hz
10 100 1
Time,m.seconds
10
Fig.5
Fig.6

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